Technology of fabrication of CDS<sub>X</sub>Te<sub>1-X</sub> solid solution on silicon substrate
نویسندگان
چکیده
Heterojunction between Si and CdSxTe1-x have been obtained by vacuum deposition of powders cadmium sulfide telluride on the surface monocrystalline silicon. The optimal temperature regime for growth CdS x Te 1-x solid solution silicon has determined. values crystal lattice constant thickness at interface n/Si − n/ heterostructure are calculated.
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ژورنال
عنوان ژورنال: E3S web of conferences
سال: 2023
ISSN: ['2555-0403', '2267-1242']
DOI: https://doi.org/10.1051/e3sconf/202340103075